2sc4132 / 2sd1857 transistors power transistor (120v, 1.5a) 2sc4132 / 2sd1857 z features 1) high breakdown voltage. (bv ceo = 120v) 2) low collector output capacitance. (typ. 20pf at v cb = 10v) 3) high transition frequency. (f t = 80mhz) 4) complements the 2sb1236. z z z z absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c i cp p c tj tstg limits 120 120 5 2 3 0.5 2 1 150 ? 55~+150 unit v v v a a w * 1 * 2 2sc4132 2sd1857 c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature * 1 single pulse pw = 10ms * 2 when mounted on a 40 40 0.7mm ceramic board. z z z z packaging specifications and h fe type 2sc4132 mpt3 pqr cb * t100 1000 2sd1857 atv pqr ? tv2 2500 * denotes h fe package h fe marking code basic ordering unit (pieces) z z z z external dimensions (units : mm) rohm : mpt3 eiaj : sc-62 rohm : atv 2sd1857 2sc4132 1.5 (1) base(gate) 0.4 (2) collector(drain) (3) emitter(source) 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0 0.45 (2) collector 1.05 (3) base taping specifications (1) emitter 0.5 ( 1 ) 0.65max. 2.54 ( 2 ) 2.54 ( 3 ) 6.8 1.0 14.5 0.9 4.4 2.5 z z z z electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) f t cob 120 120 5 ? ? ? ? ? ? ? ? ? ? ? 80 20 ? ? ? 1 1 0.4 ? ? v v v a a v * * mhz pf i c = 50 a i c = 1ma i e = 50 a v cb = 100v v eb = 4v i c /i b = 1a/0.1a h fe 82 ? 390 ? v ce /i c = 5v/0.1a v ce = 5v , i e = ? 0.1a , f = 30mhz v cb = 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage transition frequency output capacitance dc current transfer ratio * measured using pulse current.
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